Solar cells with a barrier layer based on polysilazane

US9234119B2 · kind B2 · utility

Assignee

• AZ Electronic Materials (Luxembourg) S.A.R.L. · LU

Inventors

• Klaus Rode · Treuchtlingen, DE
• Sandra Stojanovic · Gersthofen, DE
• Jan Schniebs · Berlin, DE
• Christian Kaufmann · Berlin, DE
• Hans-Werner Schock · Stuttgart, DE

Key dates

• Filing date: Mar 16, 2010
• Grant date: Jan 12, 2016
• Expiry date: May 3, 2033

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50
• WIPO field: Macromolecular chemistry, polymers
• WIPO sector: Chemistry

Abstract

The invention relates to a thin-film solar cell (10) comprising a substrate (1) of metal or glass, a dielectric barrier layer (2) based on a polysilazane and a photovoltaic layer structure (4) of the copper-indium sulphide (CIS) type or the copper-indium selenide (CIGSe) type.