Patent · US Active

Method for producing silicon layers

US9234281B2 · kind B2 · utility

0Cited by

3References

20Claims

0Family size

Assignee

EVONIK DEGUSSA GMBH · DE

Inventors

Stephan Wieber · Karlsruhe, DE
Matthias Patz · Heverlee, BE
Reinhard Carius · Lich, DE
Torsten Bronger · Aachen, DE
Michael Cölle · Haltern am See, DE

Key dates

Filing date	Nov 10, 2010
Grant date	Jan 12, 2016
Priority date	—
Expiry date	Apr 11, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/02628
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

The invention relates to a liquid-phase method for the thermal production of silicon layers on a substrate, wherein at least one higher silicon that can be produced from at least one hydridosilane of the generic formula SiaH2a+2 (with a=3-10) being applied to a substrate and then being thermally converted to a layer that substantially consists of silicon, the thermal conversion of the higher silane proceeding at a temperature of 500-900° C. and a conversion time of ≦5 minutes. The invention also relates to silicon layers producible according to said method and to their use.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.