Method and apparatus for reducing impurities in a single crystal based on ingot length
US9234298B2 · kind B2 · utility
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1References
13Claims
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Key dates
| Filing date | Oct 12, 2012 |
| Grant date | Jan 12, 2016 |
| Priority date | — |
| Expiry date | Jun 21, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1072
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for growing a single crystal in a chamber. The method includes heating raw material to form a melt for forming the single crystal. A crystal seed is then inserted into the melt and pulled from the melt to form a partial ingot, wherein the partial ingot radiates heat. An amount of gas is then introduced into the chamber which corresponds to a size of the partial ingot so as to provide a constant crystallization rate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.