Patent · US Active

Single-package bridge-type magnetic field sensor

US9234948B2 · kind B2 · utility

2Cited by
1References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 31, 2011
Grant dateJan 12, 2016
Priority date
Expiry dateApr 22, 2032

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01R33/098
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A magnetoresistive sensor bridge utilizing magnetic tunnel junctions is disclosed. The magnetoresistive sensor bridge is composed of one or more magnetic tunnel junction sensor chips to provide a half-bridge or full bridge sensor in a standard semiconductor package. The sensor chips may be arranged such that the pinned layers of the different chips are mutually anti-parallel to each other in order to form a push-pull bridge structure. The sensor chips are then interconnected using wire bonding. The chips can be wire-bonded to various standard semiconductor leadframes and packaged in inexpensive standard semiconductor packages. The bridge design may be push-pull or referenced. In the referenced case, the on-chip reference resistors may be implemented without magnetic shielding.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.