Patent · US Active

Static electro-optical phase shifter having a dual pin junction

US9235068B2 · kind B2 · utility

5Cited by
1References
22Claims
0Family size

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Inventor

Key dates

Filing dateMay 7, 2014
Grant dateJan 12, 2016
Priority date—
Expiry dateJul 5, 2034

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG02F1/212
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A semiconductor electro-optical phase shifter may include a first optical action zone having a minimum doping level, a first lateral zone and a central zone flanking the first optical action zone along a first axis, doped respectively at first and second conductivity types so as to form a P-I-N junction between the first lateral zone and the central zone. The phase shifter may include a second optical action zone having a threshold doping level, and a second lateral zone flanking the second optical action zone with the central zone along the first axis doped at the first conductivity type so as to form a P-I-N junction between the second lateral zone and the central zone.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.