SCR simulation model
US9235667B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 28, 2013 |
| Grant date | Jan 12, 2016 |
| Priority date | — |
| Expiry date | Apr 8, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F30/367
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A model for simulating the electrical behavior of a thyristor includes a model of an NPN bipolar transistor whose emitter forms the cathode of the thyristor and the base forms a low-side control terminal of the thyristor, and a model of a PNP bipolar transistor whose emitter forms the anode of the thyristor and the base forms a high-side control terminal of the thyristor, the collector of the PNP transistor being connected to the low-side control terminal and the collector of the NPN transistor being connected to the high-side control terminal. The transistor models are present a small signal behavior over the entire range of anode currents of the thyristor, whereby the transistor models exhibit a gain drop when the anode current exits the small signal range.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.