Magnetic memory devices and methods of writing data to the same
US9236105B2 · kind B2 · utility
8Cited by
1References
24Claims
0Family size
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Key dates
| Filing date | Feb 19, 2014 |
| Grant date | Jan 12, 2016 |
| Priority date | — |
| Expiry date | Apr 13, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/18
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Magnetic memory devices include a magnetoresistive cell including a free layer having a variable magnetization direction and a pinned layer having a fixed magnetization direction, a bit line on the magnetoresistive cell and including a spin Hall effect material layer exhibiting a spin Hall effect and contacting the free layer; and a lower electrode under the magnetoresistive cell. A voltage is applied between the bit line and the lower electrode so that current passes through the magnetoresistive cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.