Semiconductor device
US9236373B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 18, 2015 |
| Grant date | Jan 12, 2016 |
| Priority date | — |
| Expiry date | Feb 18, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2017/6875
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A semiconductor device according to the embodiments includes: a first normally-off transistor including a first source terminal, a first drain terminal, and a first gate terminal; a normally-on transistor including a second source terminal connected to the first drain terminal, a second drain terminal, and a second gate terminal connected to the first source terminal; a protection element provided between the first gate terminal and the second drain terminal, and having breakdown voltage lower than breakdown voltage of the normally-on transistor; and a first diode including a first anode connected to the second drain terminal and a first cathode connected to the protection element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.