Manufacturing method of solid-state imaging apparatus
US9236413B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 6, 2014 |
| Grant date | Jan 12, 2016 |
| Priority date | — |
| Expiry date | Feb 6, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
A color filter 5 is formed above a semiconductor substrate SB, in an area above a predetermined light receiving portion among a plurality of light receiving portions 1. A sacrificial layer 8 is formed on upper and side of the first color filter 5. Color filters 6 and 7 are formed above the semiconductor substrate SB, in areas above other light receiving portions adjacent to the predetermined light receiving portion, to expose at least part of the upper surface area of the first color filter 5 on the sacrificial layer 8. The sacrificial layer 8 is etched to remove the upper and side areas of the color filter 5 on the sacrificial layer 8 to form hollow portions 9 between the color filter 5 and the color filter 6 and between the color filter 5 and the color filter 7.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.