Semiconductor device and termination region structure thereof
US9236431B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 18, 2014 |
| Grant date | Jan 12, 2016 |
| Priority date | — |
| Expiry date | Apr 18, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/605
Abstract
A termination region structure of a semiconductor device is provided, which includes: a semiconductor layer; a plurality of trenches, formed on a surface of the semiconductor layer; a connecting trench, formed on the surface of the semiconductor layer, for connecting two adjacent trenches in the plurality of trenches; a first insulating layer, formed on surfaces of the plurality of trenches, the connecting trench, and the semiconductor layer; a conductive material, formed in the plurality of trenches and the connecting trench; a second insulating layer, covering part of a surface of the first insulating layer and part of a surface of the conductive material; and a metal layer, covering part of a surface of the second insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.