Oxide thin film transistor, method for fabricating TFT, display device having TFT, and method for fabricating the same
US9236495B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2012 |
| Grant date | Jan 12, 2016 |
| Priority date | — |
| Expiry date | Aug 28, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
There are provided an oxide TFT, a method for fabricating a TFT, an array substrate for a display device having a TFT, and a method for fabricating the display device. The oxide thin film transistor includes: a gate electrode formed on a substrate; a gate insulating layer formed on the entire surface of the substrate including the gate electrode; an active layer pattern formed on the gate insulating layer above the gate electrode and completely overlapping the gate electrode; an etch stop layer pattern formed on the active layer pattern and the gate insulating layer; and a source electrode and a drain electrode formed on the gate insulating layer including the etch stop layer pattern and the active layer pattern and spaced apart from one another, and overlapping both sides of the etch stop layer pattern and the underlying active layer pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.