Method for fabricating a magnetoresistive device
US9236565B2 · kind B2 · utility
4Cited by
3References
20Claims
0Family size
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Key dates
| Filing date | Apr 28, 2015 |
| Grant date | Jan 12, 2016 |
| Priority date | — |
| Expiry date | Apr 28, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/127
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Embodiments of the invention provide a method for fabricating a magnetoresistive device. The method comprises: releasing a multi-layer magnetoresistive structure for forming the magnetoresistive device from a first substrate to relax an intrinsic stress in the multi-layer magnetoresistive structure such that the magnetic and/or magnetoresistive properties of the magnetoresistive device can be improved. The magnetic and/or magnetoresistive properties include, but are not limited to coercivity, squareness or abruptness of switching, magnetoresistance (MR) and resistance of the magnetoresistive device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.