Composition for tungsten CMP
US9238754B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 11, 2014 |
| Grant date | Jan 19, 2016 |
| Priority date | — |
| Expiry date | Apr 4, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, an amine compound in solution in the liquid carrier, and an iron containing accelerator. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.