Apparatus and method for real time measurement of substrate temperatures for use in semiconductor growth and wafer processing
US9239265B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 6, 2010 |
| Grant date | Jan 19, 2016 |
| Priority date | — |
| Expiry date | Oct 23, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J5/0821
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The invention is an optical method and apparatus for measuring the temperature of semiconductor substrates in real-time, during thin film growth and wafer processing. Utilizing the nearly linear dependence of the interband optical absorption edge on temperature, the present method and apparatus result in highly accurate measurement of the absorption edge in diffuse reflectance and transmission geometry, in real time, with sufficient accuracy and sensitivity to enable closed loop temperature control of wafers during film growth and processing. The apparatus operates across a wide range of temperatures covering all of the required range for common semiconductor substrates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.