Semiconductor memory device with a selection transistor having same shape and size as a memory cell transistor
US9240221B2 · kind B2 · utility
7Cited by
16References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 14, 2013 |
| Grant date | Jan 19, 2016 |
| Priority date | — |
| Expiry date | Dec 8, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A circuit on an end column of a divided memory array is formed by a block selection transistor having the same shape as that of a memory cell transistor. As the pattern of the connecting section between the main bit line and the sub-bit line is made in the same shape as that of the memory cell, it is possible to realize a pattern uniformity and to eliminate the need for using memory array dummy patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.