Thin film transistor array substrate and producing method thereof
US9240424B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2012 |
| Grant date | Jan 19, 2016 |
| Priority date | — |
| Expiry date | Nov 21, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
Disclosed are a thin film transistor array substrate and a producing method thereof in the embodiments of the present invention, the producing method comprising: forming an active layer thin film and a conductive layer thin film on a substrate; depositing a source/drain electrode layer thin film on the conductive layer thin film, treating the conductive layer thin film and the source/drain electrode layer thin film using gray tone or half tone masking process, to form at least two data lines, a pixel electrode and source/drain electrodes of the thin film transistor (TFT); after depositing an insulating layer thin film covered the active layer thin film, the source/drain electrodes, the data lines and the pixel electrode, forming a through hole and a gate insulating layer of the TFT on the insulating layer, to form an active layer of the TFT; forming a gate electrode of the TFT and at least two gate scanning lines cross with the data wires.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.