Methods of forming semiconductor devices including an embedded stressor, and related apparatuses
US9240460B2 · kind B2 · utility
1Cited by
1References
20Claims
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Key dates
| Filing date | Jul 3, 2014 |
| Grant date | Jan 19, 2016 |
| Priority date | — |
| Expiry date | Jul 3, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6213
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods of forming semiconductor devices are provided. A method of forming a semiconductor device includes forming preliminary trenches adjacent opposing sides of an active region. The method includes forming etching selection regions in portions of the active region that are exposed after forming the preliminary trenches. The method includes forming trenches by removing the etching selection regions. Moreover, the method includes forming a stressor in the trenches. Related apparatuses are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.