Bipolar transistor having laterally extending collector
US9240468B2 · kind B2 · utility
1Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 24, 2014 |
| Grant date | Jan 19, 2016 |
| Priority date | — |
| Expiry date | Mar 24, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/824
Abstract
A semiconductor device and a method of making the same. The device includes a semiconductor substrate. The device also includes a bipolar transistor on the semiconductor substrate. The bipolar transistor includes an emitter. The bipolar transistor also includes a base located above the emitter. The bipolar transistor further includes a laterally extending collector located above the base. The collector includes a portion that extends past an edge of the base.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.