Semiconductor device and method for manufacturing same
US9240491B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 26, 2012 |
| Grant date | Jan 19, 2016 |
| Priority date | — |
| Expiry date | Jun 26, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
A semiconductor device (100A) has an oxide semiconductor layer (11). The oxide semiconductor layer (11) has a channel region (11c), and a source region (11s) and drain region (11d) positioned on respective sides of the channel region (11c). The source region (11s) has a low-resistance source region (11sx) that has a lower resistance than the channel region (11c), and the drain region (11d) has a low-resistance drain region (11dx) that has a lower resistance than the channel region (11c). The carrier concentrations of the low-resistance source region (11sx) and the low-resistance drain region (11dx) become progressively lower from a connecting portion between a source electrode (17) and the low-resistance source region (11sx) and a connecting portion between a drain electrode (18) and the low-resistance drain region (11dx) towards the channel region (11c).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.