Image sensors having transfer gate electrodes in trench
US9240512B2 · kind B2 · utility
4Cited by
6References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 14, 2014 |
| Grant date | Jan 19, 2016 |
| Priority date | — |
| Expiry date | Jul 18, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
Provided is an image sensor including a semiconductor substrate having a trench and having a first conductivity type, a photoelectric conversion layer formed in the semiconductor substrate below the trench to have a second conductivity type, first and second transfer gate electrodes provided in the trench covered with a gate insulating layer, a first charge-detection layer formed in the semiconductor substrate adjacent to the first transfer gate electrode, and a second charge-detection layer formed in the semiconductor substrate adjacent to the second transfer gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.