Light emitting diode device having super lattice structure and a nano-structure layer
US9240518B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 18, 2014 |
| Grant date | Jan 19, 2016 |
| Priority date | — |
| Expiry date | Aug 18, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
A light emitting diode device is provided, which comprises a silicon-based substrate, a buffer layer, a super lattice structure layer, a nano-structure layer, a first semiconductor layer, a light emitting layer, and a second semiconductor layer. The buffer layer is formed on the silicon-based substrate, the super lattice structure layer is formed on the buffer layer, the nano-structure layer is formed on the super lattice structure layer, a first semiconductor layer is formed on the nano-structure layer, and the light emitting layer is formed between the first semiconductor layer and the second semiconductor layer. The super lattice layer and the nano-structure can release the stress within the light emitting diode device, and reduce the epitaxy defect, so that the internal quantum effect and the external quantum effect can be increased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.