Patent · US Active

Method for producing a structure for microelectronic device assembly

US9241403B2 · kind B2 · utility

2Cited by

4References

9Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventor

Gabriel Pares · Bernin, FR

Key dates

Filing date	Nov 26, 2013
Grant date	Jan 19, 2016
Priority date	—
Expiry date	Nov 26, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/00014
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Forming of a microelectronic device including a substrate containing at least one conductive pad, the pad being provided with a bottom surface resting on the substrate and an upper surface opposite the bottom surface. The upper surface of the pad has a stack applied thereto formed of a conductive layer and a protective dielectric layer including an opening called first opening facing the pad and exposing the conductive layer. At least one insulating block is arranged on a peripheral region of the upper surface of the pad, the insulating block having a cross-section forming a closed contour and having an opening called second opening. A conductive pillar is located in the center of the contour in the second opening.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.