Method for etching atomic layer of graphene
US9245752B2 · kind B2 · utility
11Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 22, 2014 |
| Grant date | Jan 26, 2016 |
| Priority date | — |
| Expiry date | Jan 22, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/882
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This present disclosure relates to an atomic layer etching method for graphene, including adsorbing reactive radicals onto a surface of the graphene and irradiating an energy source to the graphene on which the reactive radicals are adsorbed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.