Oxide thin film transistor and method for manufacturing the same, array substrate, and display apparatus
US9246007B2 · kind B2 · utility
3Cited by
1References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 9, 2012 |
| Grant date | Jan 26, 2016 |
| Priority date | — |
| Expiry date | Oct 9, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
Disclosed are an oxide thin film transistor (oxide-TFT) which can prevent H+ ions from invading into an active layer to maintain a stable characteristics of the TFT, a method for fabricating the oxide-TFT, an array substrate, and a display apparatus. The oxide-TFT comprises a substrate (200), and a gate electrode (201) and a gate insulating layer (202) sequentially disposed on the substrate. An active layer (203) is disposed on the gate insulating layer and is coated with a blocking layer, which at least comprises a first blocking layer (204) and a second blocking layer (205).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.