Method for manufacturing an interdigitated back contact solar cell

US9246029B2 · kind B2 · utility

Assignee

• E.I. DU PONT DE NEMOURS AND COMPANY · US

Inventors

• Giuseppe Scardera · Sunnyvale, US
• Dmitry Poplavskyy · San Jose, US
• Daniel A. Inns · Palo Alto, US
• Karim Lotfi Bendimerad · San Francisco, US
• Shannon Dugan · Hutchinson, US

Key dates

• Filing date: Feb 20, 2015
• Grant date: Jan 26, 2016
• Expiry date: Feb 20, 2035

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

A method for manufacturing an interdigitated back contact solar cell, comprising steps of: (a) providing a doped silicon substrate; (b) doping the rear surface of the substrate homogeneously with boron in a blanket pattern, thereby forming a p+ region on the rear surface of the silicon substrate; (c) forming a silicon dioxide layer on the front and rear surface; (d) depositing a phosphorus-containing doping paste on the rear surface in a second pattern; (e) heating the silicon substrate to locally diffuse phosphorus into the rear surface of the silicon substrate, thereby forming an n+ region on the rear surface of the silicon substrate through the second pattern, wherein the p+ region and the n+ region on the rear surface collectively form an interdigitated pattern; and (f) removing the second silicon dioxide layer from the silicon substrate.