Method for fabricating nano-patterned substrate for high-efficiency nitride-based light-emitting diode
US9246050B2 · kind B2 · utility
6Cited by
0References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 17, 2013 |
| Grant date | Jan 26, 2016 |
| Priority date | — |
| Expiry date | Apr 17, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/82
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method of manufacturing a substrate for a light emitting diode including a convex section forming step and a crystallization/crystallizing step. According to the method and the substrate for the light emitting diode, light extraction is significantly improved and nano to micron sized pattern, economically formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.