Light-emitting device and fabrication method thereof
US9246053B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2015 |
| Grant date | Jan 26, 2016 |
| Priority date | — |
| Expiry date | Jun 24, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/018
Abstract
A light-emitting device of little aging electric leakage and high luminous efficiency and fabrication thereof, in which, the light-emitting device includes: a semiconductor epitaxial laminated layer that comprises an N-type semiconductor layer, a P-type semiconductor layer and a light-emitting layer between the N-type semiconductor layer and the P-type semiconductor layer, the surface of which has deflected dislocation; electromigration resistant metal that fills into the deflected dislocation over the N-type or/and P-type semiconductor layer surface through pretreatment to block the electromigration channel formed over the semiconductor epitaxial laminated layer due to deflected dislocation to eliminate electric leakage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.