Ferroelectric thin film and method for producing same
US9246080B2 · kind B2 · utility
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16Claims
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Key dates
| Filing date | Feb 8, 2012 |
| Grant date | Jan 26, 2016 |
| Priority date | — |
| Expiry date | Apr 2, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12812
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In order to obtain a ferroelectric thin film having good crystallinity and realizing high piezoelectric properties, and a production method therefor, provided is a ferroelectric thin film constituting a dielectric material having a perovskite structure that comprises Zr and Ti formed on a substrate, wherein a layer having a Zr ratio that is smaller than a predetermined ratio and having good crystallinity and a layer that realizes good piezoelectric properties and has a Zr ratio that is about as great as the predetermined ratio are combined. A production method is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.