Method of manufacturing light-absorbing layer having semiconductor nanoparticles and method of manufacturing semiconductor device having the same light-absorbing layer
US9246116B2 · kind B2 · utility
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Key dates
| Filing date | Jan 7, 2014 |
| Grant date | Jan 26, 2016 |
| Priority date | — |
| Expiry date | Jan 7, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
An exemplary method of manufacturing a light-absorbing layer and a method of manufacturing a semiconductor device including the same light-absorbing layer are provided. The exemplary method includes: forming a nanoparticles film by applying a semiconductor nanoparticles solution on a substrate; thermally treating the nanoparticles film at least one time to cause adhesion among the nanoparticles; and forming a light-absorbing layer by applying a light-absorbing solution on the nanoparticles film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.