Semiconductor laser element and method of manufacturing the same
US9246306B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2014 |
| Grant date | Jan 26, 2016 |
| Priority date | — |
| Expiry date | Sep 29, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32341
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser element includes a substrate; a semiconductor layer formed on a front surface of the substrate; a first electrode formed on a back surface of the substrate; a second electrode formed on a front surface of the semiconductor layer; and at least one mark configured to allow reading of predetermined information, the at least one mark being formed in at least one of (i) a position on the surface on which the first electrode is formed, spaced apart from the first electrode and (ii) a position on the surface on which the second electrode is formed, spaced apart from the second electrode. The at least one mark is made of a metal material and has a thickness smaller than a thickness of the electrode that is formed on the surface on which the at least one mark is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.