Network of semiconductor structures with fused insulator coating
US9249354B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 12, 2013 |
| Grant date | Feb 2, 2016 |
| Priority date | — |
| Expiry date | Dec 12, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8512
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Networks of semiconductor structures with fused insulator coatings and methods of fabricating networks of semiconductor structures with fused insulator coatings are described. In an example, a method of fabricating a semiconductor structure involves forming a mixture including a plurality of discrete semiconductor nanocrystals. Each of the plurality of discrete semiconductor nanocrystals is discretely coated by an insulator shell. The method also involves adding a base to the mixture to fuse the insulator shells of each of the plurality of discrete nanocrystals, providing an insulator network. Each of the plurality of discrete semiconductor nanocrystals is spaced apart from one another by the insulator network. The base one such as, but not limited to, LiOH, RbOH, CsOH, MgOH, Ca(OH)2, Sr(OH)2, Ba(OH)2, (Me)4NOH, (Et)4NOH, or (Bu)4NOH.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.