Nonvolatile memory device and related wordline driving method
US9251878B2 · kind B2 · utility
2Cited by
10References
15Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 21, 2014 |
| Grant date | Feb 2, 2016 |
| Priority date | — |
| Expiry date | Apr 21, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/08
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile memory device comprises multiple memory blocks each comprising multiple memory cells arranged at intersections of wordlines and bitlines, an address decoder configured to electrically connect first lines to wordlines of one of the memory blocks in response to an address, a line selection switch circuit configured to electrically connect the first lines to second lines in different configurations according to the address, a first line decoder configured to provide the second lines with wordline voltages needed for driving, and a voltage generator configured to generate the wordline voltages.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.