Semiconductor storage device
US9251902B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 10, 2014 |
| Grant date | Feb 2, 2016 |
| Priority date | — |
| Expiry date | Mar 10, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3454
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The semiconductor storage device of the embodiment includes memory cells. Word lines are connected to the memory cells. Bit lines are connected to the memory cells. A sense amplifier unit is connected to the bit lines. A data write operation includes a first write loop and a second write loop. The first write loop includes a first program operation and a first verify operation. The second write loop includes a second program operation and a second verify operation. A maximum value of a consumed current in the first verify operation is substantially equal to a maximum value of the consumed current in the second verify operation. The consumed current in the first verify operation is substantially same as the consumed current in the second verify operation if data input in the data write operation is all equal to first data corresponding to an erasure state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.