Semiconductor device
US9252200B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 23, 2014 |
| Grant date | Feb 2, 2016 |
| Priority date | — |
| Expiry date | Oct 23, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/856
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a first semiconductor chip, a first multilayer interconnect layer is formed on a first substrate, and a first inductor is formed in the first multilayer interconnect layer. In a second semiconductor chip, a second multilayer interconnect layer is formed on a second substrate. A second inductor is formed in the second multilayer interconnect layer. The first semiconductor chip and the second semiconductor chip overlap each other in a direction in which the first multilayer interconnect layer and the second multilayer interconnect layer face each other. In addition, the first inductor and the second inductor overlap each other when seen in a plan view. At least one end of a first insulating film does not overlap the end of a facing region, in a Y direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.