Unit for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide
US9252206B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2011 |
| Grant date | Feb 2, 2016 |
| Priority date | — |
| Expiry date | Dec 16, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The cost of liquid phase epitaxial growth of a monocrystalline silicon carbide is reduced. A feed material 11 is such that when a surface layer thereof containing a polycrystalline silicon carbide with a 3C crystal polymorph is subjected to X-ray diffraction, a diffraction peak corresponding to a (111) crystal plane and a diffraction peak other than the diffraction peak corresponding to the (111) crystal plane are observed as diffraction peaks corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph. A seed material 12 is such that when a surface layer thereof containing a polycrystalline silicon carbide with a 3C crystal polymorph is subjected to X-ray diffraction, a first-order diffraction peak corresponding to a (111) crystal plane is observed as a diffraction peak corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph but no other first-order diffraction peak having a diffraction intensity of 10% or more of the diffraction intensity of the first-order diffraction peak corresponding to the (111) crystal plane is observed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.