Nitride semiconductor device and fabricating method thereof
US9252220B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 5, 2015 |
| Grant date | Feb 2, 2016 |
| Priority date | — |
| Expiry date | Jan 5, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/854
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A nitride semiconductor power device includes an AlGaN multilayer, which has changeable Al composition along a depositing direction, and SixNy layer, so as to minimize an increase in a leakage current and a decrease in a breakdown voltage, which are caused while fabricating a heterojunction type HFET device. A semiconductor device includes a buffer layer, an AlGaN multilayer formed on the buffer layer, a GaN channel layer formed on the AlGaN multilayer, and an AlGaN barrier layer formed on the AlGaN multilayer, wherein aluminum (Al) composition of the AlGaN multilayer changes along a direction that the AlGaN multilayer is deposited.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.