Self-aligned insulated film for high-k metal gate device
US9252224B2 · kind B2 · utility
0Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 28, 2014 |
| Grant date | Feb 2, 2016 |
| Priority date | — |
| Expiry date | Aug 28, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28088
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit includes a semiconductor substrate, a gate dielectric over the substrate, a metal gate structure over the semiconductor substrate and the gate dielectric, a dielectric film on the metal gate structure, the dielectric film comprising oxynitride combined with metal from the metal gate, and an interlayer dielectric (ILD) on either side of the metal gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.