Self-aligned thin film transistor and fabrication method thereof

US9252241B2 · kind B2 · utility

Assignee

• KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY · KR

Inventors

• Him Chan Oh · Seoul, KR
• Chi-Sun Hwang · Daejeon, KR
• Sang Hee Park · Daejeon, KR

Key dates

• Filing date: Sep 19, 2013
• Grant date: Feb 2, 2016
• Expiry date: Oct 4, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D99/00

Abstract

Disclosed are a self-aligned thin film transistor capable of simultaneously improving an operation speed and stability and minimizing a size thereof by forming source and drain electrodes so as to be self-aligned, and a fabrication method thereof. The method of fabricating a thin film transistor according to an exemplary embodiment of the present disclosure includes: forming an active layer, a gate insulator, and a gate layer on a substrate; forming a photoresist layer pattern for defining a shape of a gate electrode on the gate layer; etching the gate layer, the gate insulator, and the active layer by using the photoresist layer pattern; depositing a source and drain layer on the etched substrate by a deposition method having directionality; and forming a gate electrode and self-aligned source electrode and drain electrode by removing the photoresist layer pattern.