Non-volatile semiconductor memory device
US9252289B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 17, 2013 |
| Grant date | Feb 2, 2016 |
| Priority date | — |
| Expiry date | Jun 10, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/684
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile semiconductor memory device has a semiconductor substrate, an element isolation region disposed in a surface of the semiconductor substrate, a well region disposed along one principal surface of the semiconductor substrate, source and drain regions arranged in the well region, a gate oxide film arranged on the surface of the semiconductor substrate between the source region and the drain region, a floating gate disposed on the gate oxide film, and an insulating film disposed on a surface of the floating gate. A control gate is capacitively coupled to the floating gate disposed through intermediation of the insulating film. A resistive element is serially connected to the control gate. Write characteristics of the non-volatile semiconductor memory device are improved as a result of a delay effect of the resistive element serially connected to the control gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.