Optoelectronic device and the manufacturing method thereof

US9252297B2 · kind B2 · utility

Assignee

• Epistar Corporation · TW

Inventors

• Yi-Hung Lin · Jianmenkeng, TW
• Cheng Chen · Hsinchu, TW

Key dates

• Filing date: Dec 4, 2012
• Grant date: Feb 2, 2016
• Expiry date: Sep 4, 2033

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

An optoelectronic device comprises an optoelectronic semiconductor stack layer; a conductive layer on the optoelectronic semiconductor stack layer, the conductive layer comprising a top surface, a bottom surface opposite to the top surface, and a side surface; a first barrier layer covering the top surface; a second barrier layer covering the bottom surface; and a first metal oxide layer, wherein the first metal oxide layer covers the side surface, the first barrier layer, and the second barrier layer.