Photovoltaic device, manufacturing method thereof, and photovoltaic module
US9252305B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 2, 2012 |
| Grant date | Feb 2, 2016 |
| Priority date | — |
| Expiry date | Dec 15, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A photovoltaic device includes a silicon substrate of a first conduction type that includes an impurity diffusion layer on one surface side; a light-receiving-surface side electrode that includes a plurality of grid electrodes electrically connected to the impurity diffusion layer; and a back-surface side electrode formed on the other surface side of the silicon substrate wherein the impurity diffusion layer includes a first impurity diffusion layer and a second impurity diffusion layer, and wherein the first impurity diffusion layer is formed so that a direction perpendicular to a longitudinal direction of the grid electrodes is a longitudinal direction thereof, and so that an area ratio of the first impurity diffusion layer to a band region is equal to or lower than 50%.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.