Solution containment during buffer layer deposition

US9252318B2 · kind B2 · utility

Assignee

• Hanergy Hi-Tech Power (HK) Limited · CN

Inventors

• Jeffrey S. Britt · Tucson, US
• Scot Albright · Tucson, US
• Urs Schoop · Westborough, US
• Walter Stoss · Tucson, US
• Darren Verebelyi · Tucson, US

Key dates

• Filing date: Dec 16, 2013
• Grant date: Feb 2, 2016
• Expiry date: Jul 10, 2034

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/541

Abstract

Improved methods and apparatus for forming thin-film layers of chalcogenide on a substrate web. Solutions containing the reactants for the chalcogenide layer may be contained substantially to the front surface of the web, controlling the boundaries of the reaction and avoiding undesired deposition of chalcogenide upon the back side of the web.