Semiconductor memory device and method of manufacturing the same
US9252358B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 14, 2013 |
| Grant date | Feb 2, 2016 |
| Priority date | — |
| Expiry date | Mar 29, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
Abstract
First, a trench penetrating first conductive layers and interlayer insulating layers is formed. Next, a column-shaped conductive layer is formed to fill the trench via a side wall layer. Then, after formation of the side wall layer, by migration of oxygen atoms between the side wall layer and the first conductive layers or migration of oxygen atoms between the side wall layer and the interlayer insulating layers, a proportion of oxygen atoms in the side wall layer adjacent to the interlayer insulating layers is made larger than a proportion of oxygen atoms in the side wall layer adjacent to the first conductive layers, whereby the side wall layer adjacent to the first conductive layers is caused to function as the variable resistance element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.