Moving image sensor having multiphase digital summation and charge storage nodes separated from photodiodes by charge transfer gates
US9253426B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 18, 2012 |
| Grant date | Feb 2, 2016 |
| Priority date | — |
| Expiry date | Jan 19, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/778
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The invention relates to time-delay and charge integration image sensors employing active CMOS technology pixels. The sensor comprises N rows of pixels and each pixel of generally square shaped comprises two (though possibly also three or four) photodiodes and charge storage nodes, having means for transferring charges from each photodiode to one or other of the storage nodes. Control of transfer from the photodiodes to one then the other of the storage nodes is carried out in such a way that one storage node receives in succession, during two successive phases of a periodic cycle, the charges from two photodiodes that have seen the same image portion during the two phases. The charges received by one of the storage nodes during the first phase is added to the charges received by the other storage node in the following phase.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.