Patent · US Active

Metamaterial and method for forming a metamaterial using atomic layer deposition

US9255328B2 · kind B2 · utility

2Cited by
1References
14Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 7, 2014
Grant dateFeb 9, 2016
Priority date
Expiry dateMar 7, 2034

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T428/24851
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

A metamaterial includes a first continuous layer formed with a first material by atomic layer deposition (ALD), a first non-continuous layer formed with a second material by ALD on first upper surface portions of a first upper surface of the first continuous layer, and a second continuous layer formed with the first material by ALD on second upper surface portions of the first upper surface of the first continuous layer and on a second upper surface of the first non-continuous layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.