Metamaterial and method for forming a metamaterial using atomic layer deposition
US9255328B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2014 |
| Grant date | Feb 9, 2016 |
| Priority date | — |
| Expiry date | Mar 7, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24851
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A metamaterial includes a first continuous layer formed with a first material by atomic layer deposition (ALD), a first non-continuous layer formed with a second material by ALD on first upper surface portions of a first upper surface of the first continuous layer, and a second continuous layer formed with the first material by ALD on second upper surface portions of the first upper surface of the first continuous layer and on a second upper surface of the first non-continuous layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.