Supply source and method for enriched selenium ion implantation
US9257286B2 · kind B2 · utility
4Cited by
7References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 1, 2014 |
| Grant date | Feb 9, 2016 |
| Priority date | — |
| Expiry date | May 28, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T137/7781
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A novel method for ion implanting isotopically enriched selenium containing source material is provided. The source material is selected and enriched in a specific mass isotope of selenium, whereby the enrichment is above natural abundance levels. The inventive method allows reduced gas consumption and reduced waste. The source material is preferably stored and delivered from a sub-atmospheric storage and delivery device to enhance safety and reliability during the selenium ion implantation process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.