Glass-ceramic-based semiconductor-on-insulator structures and method for making the same
US9257328B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 26, 2008 |
| Grant date | Feb 9, 2016 |
| Priority date | — |
| Expiry date | Dec 10, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6758
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus for forming a semiconductor on glass-ceramic structure provide for: subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer of the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to a precursor glass substrate using electrolysis; separating the exfoliation layer from the donor semiconductor wafer to thereby form an intermediate semiconductor on precursor glass structure; sandwiching the intermediate semiconductor on precursor glass structure between first and second support structures; applying pressure to one or both of the first and second support structures; and subjecting the intermediate semiconductor on precursor glass structure to heat-treatment step to crystallize the precursor glass resulting in the formation of a semiconductor on glass-ceramic structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.