Techniques for forming optoelectronic devices
US9257339B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 2, 2013 |
| Grant date | Feb 9, 2016 |
| Priority date | — |
| Expiry date | May 2, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/826
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments relate to use of a particle accelerator beam to form thin films of material from a bulk substrate are described. In particular embodiments, a bulk substrate having a top surface is exposed to a beam of accelerated particles. In certain embodiments, this bulk substrate may comprise GaN; in other embodiments this bulk substrate may comprise (111) single crystal silicon. Then, a thin film or wafer of material is separated from the bulk substrate by performing a controlled cleaving process along a cleave region formed by particles implanted from the beam. In certain embodiments this separated material is incorporated directly into an optoelectronic device, for example a GaN film cleaved from GaN bulk material. In some embodiments, this separated material may be employed as a template for further growth of semiconductor materials (e.g. GaN) that are useful for optoelectronic devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.