Semiconductor device and method of manufacturing same
US9257446B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 20, 2014 |
| Grant date | Feb 9, 2016 |
| Priority date | — |
| Expiry date | Nov 20, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
To provide a semiconductor device having a nonvolatile memory improved in characteristics. In the semiconductor device, a nonvolatile memory has a high-k insulating film (high dielectric constant film) between a control gate electrode portion and a memory gate electrode portion and a transistor of a peripheral circuit region has a high-k/metal configuration. The high-k insulating film arranged between the control gate electrode portion and the memory gate electrode portion relaxes an electric field intensity at the end portion (corner portion) of the memory gate electrode portion on the side of the control gate electrode portion. This results in reduction in uneven distribution of charges in a charge accumulation portion (silicon nitride film) and improvement in erase accuracy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.