CMOS image sensor for increasing conversion gain
US9257462B2 · kind B2 · utility
3Cited by
2References
38Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 22, 2012 |
| Grant date | Feb 9, 2016 |
| Priority date | — |
| Expiry date | Jun 25, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/813
Abstract
In one embodiment, the image sensor includes a first photodiode configured to convert an optical signal into a photocharge, a sensing node configured to store the photocharge of the first photodiode, and a circuit configured to selectively output an electrical signal corresponding to the photocharge at the sensing node on an output line. The circuit is connected to at least a first conductive contact, and the output line is disposed between the sensing node and the first conductive contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.